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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB1361
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) *Wide Area of Safe Operation *Complement to Type 2SD2052
APPLICATIONS *Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
w w
scs .i w
-150 V -150 V -5 V -9 A -15 A 100 W 3
.cn mi e
ICP
Collector Current-Pulse Collector Power Dissipation @ TC=25
PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SB1361
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -7A; IB= -0.7A
B
-2.0
V
VBE(on) ICBO
Base -Emitter On Voltage
IC= -7A; VCE= -5V
-1.8
V A A
Collector Cutoff Current
VCB= -150V; IE= 0
-50
IEBO hFE-1
Emitter Cutoff Current
VEB= -3V; IC= 0 IC= -20mA; VCE= -5V 20
-50
DC Current Gain
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
fT
Current-Gain--Bandwidth Product
COB
Output Capacitance
hFE-2Classifications Q 60-120 S 80-160
w
P
ww
scs .i
IC= -7A; VCE= -5V
IC= -0.5A; VCE= -5 V; f= 1MHz
IE= 0; VCB= -10V; f= 1MHz
.cn mi e
60 20
200
15
MHz
270
pF
100-200
isc Websitewww.iscsemi.cn
2


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